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PD-2.224 rev. C 09/98 120NQ...(R) SERIES SCHOTTKY RECTIFIER 120 Amp D-67 Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform VRRM range IFSM @ tp = 5 s sine VF TJ @ 120Apk, TJ=125C range Description/Features The 120NQ...(R) high current Schottky rectifier module series has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. 150 C TJ operation Unique high power, Half-Pak module Replaces two parallel DO-5's Easier to mount and lower profile than DO-5's High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Very low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability 120NQ...(R) Units 120 35 to 45 29,000 0.52 - 55 to 150 A V A V C 120NQ045 Lug Terminal Anode Base Cathode 120NQ045R Lug Terminal Cathode Base Anode Outline D-67 HALF PAK Module Dimensions in millimeters and (inches) www.irf.com 1 120NQ...(R) Series PD-2.224 rev. C 09/98 Voltage Ratings Part number VR Max. DC Reverse Voltage (V) 35 40 45 VRWM Max. Working Peak Reverse Voltage (V) 120NQ035(R) 120NQ040(R) 120NQ045(R) Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Current * See Fig. 5 IFSM EAS IAR Max. Peak One Cycle Non-Repetitive Surge Current * See Fig. 7 Non-Repetitive Avalanche Energy Repetitive Avalanche Current 120NQ Units 120 29,000 1550 81 12 A mJ A A Conditions 50% duty cycle @ T C = 106 C, rectangular wave form 5s Sine or 3s Rect. pulse 10ms Sine or 6ms Rect. pulse Following any rated load condition and with rated VRRM applied TJ = 25 C, IAS= 12 Amps, L = 1.12 mH Current decaying linearly to zero in 1 sec Frequency limited by TJ max. VA = 1.5 x VR typical Electrical Specifications Parameters VFM Max. Forward Voltage Drop * See Fig. 1 (1) 120NQ Units 0.57 0.73 0.52 0.69 V V V V mA mA V m pF nH V/ s @ 120A @ 240A @ 120A @ 240A T J = 25 C T J = 125 C T J = TJ max. Conditions TJ = 25 C TJ = 125 C VR = rated VR IRM Max. Reverse Leakage Current (1) * See Fig. 2 10 500 0.32 1.37 5200 7.0 10,000 VF(TO) Threshold Voltage rt CT LS Forward Slope Resistance Max. Junction Capacitance Typical Series Inductance VR = 5VDC, (test signal range 100Khz to 1Mhz) 25 C From top of terminal hole to mounting plane dv/dt Max. Voltage Rate of Change (Rated VR) Thermal-Mechanical Specifications Parameters TJ T stg Max. Junction Temperature Range Max. Storage Temperature Range (1) Pulse Width < 300s, Duty Cycle < 2% 120NQ Units -55 to 150 -55 to 150 0.40 0.15 C C C/W C/W DCoperation Conditions RthJC Max. Thermal Resistance Junction to Case RthCS Typical Thermal Resistance, Case to Heatsink wt T Approximate Weight Mounting Torque Terminal Torque Case Style Min. Max. Min. Max. * See Fig. 4 Mounting surface , smooth and greased 25.6 (0.9) g (oz.) 17 (15) 29 (25) 23 (20) 46 (40) HALF PAK Module Kg-cm (Ibf-in) Non-lubricated threads 2 www.irf.com 120NQ...(R) Series PD-2.224 rev. C 09/98 1000 10000 1000 100 10 75C 1 0.1 0.01 0 5 10 15 20 25 30 35 40 45 Reverse Voltage - V R (V) 50C 25C Reverse Current - I R (mA) T J = 150C 125C 100C Instantaneous Forward Current - I F (A) 100 Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage 10000 TJ = 150C 10 TJ = 125C TJ = 25C Junction Capacitance - C T (pF) T J = 25C 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Forward Voltage Drop - V FM (V) 1 1000 0 10 20 30 40 50 Reverse Voltage - V R (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 1 Thermal Impedance Z thJC (C/W) D= D= D= D= D= 0.75 0.50 0.33 0.25 0.20 Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage 0.1 PDM 0.01 Single Pulse (Thermal Resistance) Notes: t 1 t2 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC+ T C 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t 1 , Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics www.irf.com 3 120NQ...(R) Series PD-2.224 rev. C 09/98 160 Allowable Case Temperature - (C) Average Power Loss - (Watts) 100 90 80 70 60 50 40 30 20 10 0 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 RMS Limit DC 150 140 130 DC 120 110 100 90 see note (2) Square wave (D = 0.50) 80% Rated V R applied 80 0 20 40 60 80 100 120 140 160 180 Average Forward Current - I F(AV) (A) 0 20 40 60 80 100 120 140 160 180 Average Forward Current - I F(AV) (A) Fig. 5 - Maximum Allowable Case Temperature Vs. Average Forward Current 100000 Non-Repetit iv e Surge Current - I FSM (A) At Any Rated Load Condition And With Rated V RRM Applied Following Surge Fig. 6 - Forward Power Loss Characteristics 10000 1000 10 100 1000 10000 Square Wave Pulse Duration - t p (microsec) Fig. 7 - Maximum Non-Repetitive Surge Current L HIGH-SPEED SWITCH FREE-WHEEL DIODE 40HFL40S02 Vd = 25 Volt DUT IRFP460 Rg = 25 ohm + CURRENT MONITOR Fig. 8 - Unclamped Inductive Test Circuit (2) Formula used: T C = TJ - (Pd + PdREV) x R thJC ; Pd = Forward Power Loss = I F(AV) x VFM @ (IF(AV) / D) (see Fig. 6); Pd REV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR 4 www.irf.com |
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